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André Anders is the editor and a co-author, and 28 other scientists and engineers from six countries have contributed to the book project.The Handbook at Wiley's page.
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References for Chapter 7
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1) Order from your nearest bookseller2) Contact Wi5 Ionized Magnetron Sputtering
7.9.5 Thermal and Electron Beam Evaporation
8.1 General Design Considerations for PIII&D Pulsers8.1.1 Introduction8.2 Hard Tube Pulsers
8.1.2 Pulser Impedance
8.1.3 Pulser Circuits8.2.1 Introduction: Advantages of Hard Tube Pulsers8.3 Pulsers Based on Thyratrons with Pulse Forming Networks
8.2.2 Hard-Vacuum Tube Types
8.2.3 Hard Tube Modulator Circuits8.3.1 Introduction: Advantages of Thyratron Switches8.4 Solid State Modulators
8.3.2 Combining Thyratrons and Pulse Forming Networks
8.3.3 Characteristics of Pulse Forming Networks8.4.1 Introduction: Advantages of Solid-State Pulsers8.5 Pulse Transformer Design for PIII&D
8.4.2 Circuits for High-Power Solid-State Pulsers
8.4.3 Insulated Gate Bipolar Transistors (IGBT)
8.4.4 Thyristors (SCR)
8.4.5 Gate Turn-Off Devices (GTO)
8.4.6 Metal Oxide Field Effect Transistors (MOSFET)
8.4.7 Bipolar Transistors
8.4.8 Power Considerations and Limitations of Solid State Devices
8.4.9 Protection and Implementation of Solid State Devices
8.4.10 Device Drive Circuits8.5.1 Introduction: Use of Pulse TransformersReferences for Chapter 8
8.5.2 Transformer Design
8.5.3 Example of Empire Hard Chrome Pulser
8.5.4 General Purpose IGBT/Transformer Pulser
8.5.5 Hard-Tube/Transformer Pulser
8.5.6 High-Voltage/Transformer Pulser
9.1 Introduction
9.2 Electrical Safety9.2.1 Voltage, Current and Stored Energy7.7 Remote Gas Plasma Sources
9.2.2 Capacitively Stored Energy
9.2.3 Inductivelquasi-uniform, axially directed magnetic fields
c) ECR discharges
7.6.3.2 Sources Using Antenna Applicators
a) Magnetic field-free discharges (B0 = 0)
b) Discharges utilizing multipole magnetic fields
7.6.4 Scaling-Up of Microwave Plasma Sources
7.6.4.1 Magnetic Field-Free Discharges (B0 = 0)
a) Transmission-line plasma sources: surface-wave discharges
b) Antenna-sustained plasma sources
7.6.4.2 Discharges Confined by Quasi-Uniform Magnetic Fields
7.6.4.3 Discharges Confined by Multipolar Magnetic Fields
7.6.5 Perspectives for Microwave Discharges and Multipole Plasmas in PIII&D7.7.1 Introduction7.8 Cathodic Arc Metal Plasma Sources and Macroparticle Filters
7.7.2 Streaming Plasma from a Filament Source
7.7.3 End-Hall Plasma Source
7.7.4 Constricted Plasma Source7.8.1 Introduction7.9 Other Sources of Plasma and Vapor
7.8.2 Short-Pulse Cathodic Arc Plasma Sources
7.8.3 Long-Pulse and DC Cathodic Arc Plasma Sources
7.8.4 Macroparticle Filtering7.9.1 Spotless Cathodic ArcsReferences for Chapter 7
7.9.2 Anodic Vacuum Arcs
7.9.3 Laser Plasma Source
7.9.4 Sputtering
7.9.4.1 Introduction
7.9.4.2 Magnetron Sputtering
7.9.4.3 Unbalanced Magnetron Sputtering
7.9.4.4 Reactive Magnetron Sputtering, including RF, Pulsed DC, and AC Dual Magnetron Sputtering
7.9.4.5 Ionized Magnetron Sputtering
7.9.5 Thermal and Electron Beam Evaporation
8.1 General Design Considerations for PIII&D Pulsers8.1.1 Introduction8.2 Hard Tube Pulsers
8.1.2 Pulser Impedance
8.1.3 Pulser Circuits8.2.1 Introduction: Advantages of Hard Tube Pulsers8.3 Pulsers Based on Thyratrons with Pulse Forming Networks
8.2.2 Hard-Vacuum Tube Types
8.2.3 Hard Tube Modulator Circuits8.3.1 Introduction: Advantages of Thyratron Switches8.4 Solid State Modulators
8.3.2 Combining Thyratrons and Pulse Forming Networks
8.3.3 Characteristics of Pulse Forming Networks8.4.1 Introduction: Advantages of Solid-State Pulsers8.5 Pulse Transformer Design for PIII&D
8.4.2 Circuits for High-Power Solid-State Pulsers
8.4.3 Insulated Gate Bipolar Transistors (IGBT)
8.4.4 Thyristors (SCR)
8.4.5 Gate Turn-Off Devices (GTO)
8.4.6 Metal Oxide Field Effect Transistors (MOSFET)
8.4.7 Bipolar Transistors
8.4.8 Power Considerations and Limitations of Solid State Devices
8.4.9 Protection and Implementation of Solid State Devices
8.4.10 Device Drive Circuits8.5.1 Introduction: Use of Pulse TransformersReferences for Chapter 8
8.5.2 Transformer Design
8.5.3 Example of Empire Hard Chrome Pulser
8.5.4 General Purpose IGBT/Transformer Pulser
8.5.5 Hard-Tube/Transformer Pulser
8.5.6 High-Voltage/Transformer Pulser
9.1 Introduction
9.2 Electrical Safety9.2.1 Voltage, Current and Stored Energy7.7 Remote Gas Plasma Sources
9.2.2 Capacitively Stored Energy
9.2.3 Inductivelquasi-uniform, axially directed magnetic fields
c) ECR discharges
7.6.3.2 Sources Using Antenna Applicators
a) Magnetic field-free discharges (B0 = 0)
b) Discharges utilizing multipole magnetic fields
7.6.4 Scaling-Up of Microwave Plasma Sources
7.6.4.1 Magnetic Field-Free Discharges (B0 = 0)
a) Transmission-line plasma sources: surface-wave discharges
b) Antenna-sustained plasma sources
7.6.4.2 Discharges Confined by Quasi-Uniform Magnetic Fields
7.6.4.3 Discharges Confined by Multipolar Magnetic Fields
7.6.5 Perspectives for Microwave Discharges and Multipole Plasmas in PIII&D7.7.1 Introduction7.8 Cathodic Arc Metal Plasma Sources and Macroparticle Filters
7.7.2 Streaming Plasma from a Filament Source
7.7.3 End-Hall Plasma Source
7.7.4 Constricted Plasma Source7.8.1 Introduction7.9 Other Sources of Plasma and Vapor
7.8.2 Short-Pulse Cathodic Arc Plasma Sources
7.8.3 Long-Pulse and DC Cathodic Arc Plasma Sources
7.8.4 Macroparticle Filtering7.9.1 Spotless Cathodic ArcsReferences for Chapter 7
7.9.2 Anodic Vacuum Arcs
7.9.3 Laser Plasma Source
7.9.4 Sputtering
7.9.4.1 Introduction
7.9.4.2 Magnetron Sputtering
7.9.4.3 Unbalanced Magnetron Sputtering
7.9.4.4 Reactive Magnetron Sputtering, including RF, Pulsed DC, and AC Dual Magnetron Sputtering
7.9.4.5 Ionized Magnetron Sputtering
7.9.5 Thermal and Electron Beam Evaporation
8.1 General Design Considerations for PIII&D Pulsers8.1.1 Introduction8.2 Hard Tube Pulsers
8.1.2 Pulser Impedance
8.1.3 Pulser Circuits8.2.1 Introduction: Advantages of Hard Tube Pulsers8.3 Pulsers Based on Thyratrons with Pulse Forming Networks
8.2.2 Hard-Vacuum Tube Types
8.2.3 Hard Tube Modulator Circuits8.3.1 Introduction: Advantages of Thyratron Switches8.4 Solid State Modulators
8.3.2 Combining Thyratrons and Pulse Forming Networks
8.3.3 Characteristics of Pulse Forming Networks8.4.1 Introduction: Advantages of Solid-State Pulsers8.5 Pulse Transformer Design for PIII&D
8.4.2 Circuits for High-Power Solid-State Pulsers
8.4.3 Insulated Gate Bipolar Transistors (IGBT)
8.4.4 Thyristors (SCR)
8.4.5 Gate Turn-Off Devices (GTO)
8.4.6 Metal Oxide Field Effect Transistors (MOSFET)
8.4.7 Bipolar Transistors
8.4.8 Power Considerations and Limitations of Solid State Devices
8.4.9 Protection and Implementation of Solid State Devices
8.4.10 Device Drive Circuits8.5.1 Introduction: Use of Pulse TransformersReferences for Chapter 8
8.5.2 Transformer Design
8.5.3 Example of Empire Hard Chrome Pulser
8.5.4 General Purpose IGBT/Transformer Pulser
8.5.5 Hard-Tube/Transformer Pulser
8.5.6 High-Voltage/Transformer Pulser
9.1 Introduction
9.2 Electrical Safety9.2.1 Voltage, Current and Stored Energy7.7 Remote Gas Plasma Sources
9.2.2 Capacitively Stored Energy
9.2.3 Inductivelquasi-uniform, axially directed magnetic fields
c) ECR discharges
7.6.3.2 Sources Using Antenna Applicators
a) Magnetic field-free discharges (B0 = 0)
b) Discharges utilizing multipole magnetic fields
7.6.4 Scaling-Up of Microwave Plasma Sources
7.6.4.1 Magnetic Field-Free Discharges (B0 = 0)
a) Transmission-line plasma sources: surface-wave discharges
b) Antenna-sustained plasma sources
7.6.4.2 Discharges Confined by Quasi-Uniform Magnetic Fields
7.6.4.3 Discharges Confined by Multipolar Magnetic Fields
7.6.5 Perspectives for Microwave Discharges and Multipole Plasmas in PIII&D7.7.1 Introduction7.8 Cathodic Arc Metal Plasma Sources and Macroparticle Filters
7.7.2 Streaming Plasma from a Filament Source
7.7.3 End-Hall Plasma Source
7.7.4 Constricted Plasma Source7.8.1 Introduction7.9 Other Sources of Plasma and Vapor
7.8.2 Short-Pulse Cathodic Arc Plasma Sources
7.8.3 Long-Pulse and DC Cathodic Arc Plasma Sources
7.8.4 Macroparticle Filtering7.9.1 Spotless Cathodic ArcsReferences for Chapter 7
7.9.2 Anodic Vacuum Arcs
7.9.3 Laser Plasma Source
7.9.4 Sputtering
7.9.4.1 Introduction
7.9.4.2 Magnetron Sputtering
7.9.4.3 Unbalanced Magnetron Sputtering
7.9.4.4 Reactive Magnetron Sputtering, including RF, Pulsed DC, and AC Dual Magnetron Sputtering
7.9.4.5 Ionized Magnetron Sputtering
7.9.5 Thermal and Electron Beam Evaporation
8.1 General Design Considerations for PIII&D Pulsers8.1.1 Introduction8.2 Hard Tube Pulsers
8.1.2 Pulser Impedance
8.1.3 Pulser Circuits8.2.1 Introduction: Advantages of Hard Tube Pulsers8.3 Pulsers Based on Thyratrons with Pulse Forming Networks
8.2.2 Hard-Vacuum Tube Types
8.2.3 Hard Tube Modulator Circuits8.3.1 Introduction: Advantages of Thyratron Switches8.4 Solid State Modulators
8.3.2 Combining Thyratrons and Pulse Forming Networks
8.3.3 Characteristics of Pulse Forming Networks8.4.1 Introduction: Advantages of Solid-State Pulsers8.5 Pulse Transformer Design for PIII&D
8.4.2 Circuits for High-Power Solid-State Pulsers
8.4.3 Insulated Gate Bipolar Transistors (IGBT)
8.4.4 Thyristors (SCR)
8.4.5 Gate Turn-Off Devices (GTO)
8.4.6 Metal Oxide Field Effect Transistors (MOSFET)
8.4.7 Bipolar Transistors
8.4.8 Power Considerations and Limitations of Solid State Devices
8.4.9 Protection and Implementation of Solid State Devices
8.4.10 Device Drive Circuits8.5.1 Introduction: Use of Pulse TransformersReferences for Chapter 8
8.5.2 Transformer Design
8.5.3 Example of Empire Hard Chrome Pulser
8.5.4 General Purpose IGBT/Transformer Pulser
8.5.5 Hard-Tube/Transformer Pulser
8.5.6 High-Voltage/Transformer Pulser
9.1 Introduction
9.2 Electrical Safety9.2.1 Voltage, Current and Stored Energy7.7 Remote Gas Plasma Sources
9.2.2 Capacitively Stored Energy
9.2.3 Inductivelquasi-uniform, axially directed magnetic fields
c) ECR discharges
7.6.3.2 Sources Using Antenna Applicators
a) Magnetic field-free discharges (B0 = 0)
b) Discharges utilizing multipole magnetic fields
7.6.4 Scaling-Up of Microwave Plasma Sources
7.6.4.1 Magnetic Field-Free Discharges (B0 = 0)
a) Transmission-line plasma sources: surface-wave discharges
b) Antenna-sustained plasma sources
7.6.4.2 Discharges Confined by Quasi-Uniform Magnetic Fields
7.6.4.3 Discharges Confined by Multipolar Magnetic Fields
7.6.5 Perspectives for Microwave Discharges and Multipole Plasmas in PIII&D7.7.1 Introduction7.8 Cathodic Arc Metal Plasma Sources and Macroparticle Filters
7.7.2 Streaming Plasma from a Filament Source
7.7.3 End-Hall Plasma Source
7.7.4 Constricted Plasma Source7.8.1 Introduction7.9 Other Sources of Plasma and Vapor
7.8.2 Short-Pulse Cathodic Arc Plasma Sources
7.8.3 Long-Pulse and DC Cathodic Arc Plasma Sources
7.8.4 Macroparticle Filtering7.9.1 Spotless Cathodic ArcsReferences for Chapter 7
7.9.2 Anodic Vacuum Arcs
7.9.3 Laser Plasma Source
7.9.4 Sputtering
7.9.4.1 Introduction
7.9.4.2 Magnetron Sputtering
7.9.4.3 Unbalanced Magnetron Sputtering
7.9.4.4 Reactive Magnetron Sputtering, including RF, Pulsed DC, and AC Dual Magnetron Sputtering
7.9.4.5 Ionized Magnetron Sputtering
7.9.5 Thermal and Electron Beam Evaporation
8.1 General Design Considerations for PIII&D Pulsers8.1.1 Introduction8.2 Hard Tube Pulsers
8.1.2 Pulser Impedance
8.1.3 Pulser Circuits8.2.1 Introduction: Advantages of Hard Tube Pulsers8.3 Pulsers Based on Thyratrons with Pulse Forming Networks
8.2.2 Hard-Vacuum Tube Types
8.2.3 Hard Tube Modulator Circuits8.3.1 Introduction: Advantages of Thyratron Switches8.4 Solid State Modulators
8.3.2 Combining Thyratrons and Pulse Forming Networks
8.3.3 Characteristics of Pulse Forming Networks8.4.1 Introduction: Advantages of Solid-State Pulsers8.5 Pulse Transformer Design for PIII&D
8.4.2 Circuits for High-Power Solid-State Pulsers
8.4.3 Insulated Gate Bipolar Transistors (IGBT)
8.4.4 Thyristors (SCR)
8.4.5 Gate Turn-Off Devices (GTO)
8.4.6 Metal Oxide Field Effect Transistors (MOSFET)
8.4.7 Bipolar Transistors
8.4.8 Power Considerations and Limitations of Solid State Devices
8.4.9 Protection and Implementation of Solid State Devices
8.4.10 Device Drive Circuits8.5.1 Introduction: Use of Pulse TransformersReferences for Chapter 8
8.5.2 Transformer Design
8.5.3 Example of Empire Hard Chrome Pulser
8.5.4 General Purpose IGBT/Transformer Pulser
8.5.5 Hard-Tube/Transformer Pulser
8.5.6 High-Voltage/Transformer Pulser
9.1 Introduction
9.2 Electrical Safety9.2.1 Voltage, Current and Stored Energy9.3 Electromagnetic Radiation Safety
9.2.2 Capacitively Stored Energy
9.2.3 Inductively Stored Energy
9.2.4 General Safety Precautions Related to Stored Energy
9.2.4 Safety Precautions Related to Stored Energy
9.2.5 Lockout and Tagout Procedures ("LOTO")
9.2.6 Safety Grounding Practices
9.2.7 Equipment Grounding
9.2.8 Equipment Interlocks and Safety Interlock Systems9.3.1 Some Definitions and Relevant Considerations9.4 Vacuum and Chamber Safety
9.3.2 Non-Ionizing Radiation
9.3.2.1 Dangers of Non-Ionizing Radiation
9.3.2.2 Sub-Radiofrequency Fields
9.3.2.3 Radiofrequency, Microwave, and Infrared Radiation
9.3.2.4 Laser Radiation
9.3.2.5 Near Ultraviolet Radiation
9.3.3 Ionizing Radiation
9.3.3.1 Introduction and Definitions
9.3.3.2 Maximum Doses
9.3.3.3 Generation of Far-UV and X-Ray Radiation
9.3.3.4 Shielding of X-Ray Radiation9.4.1 Implosion Hazards9.5 Chemical Safety
9.4.2 Chamber Entry and Confined Space Hazards
9.4.3 Compressed Gas Containers9.5.1 Classification of Chemicals and Sources of InformationReferences for Chapter 9
9.5.2 Solvents and Other Liquids
9.5.3 Gases and Fumes
9.5.4 Cryogenics
10.1 Reduction of Wear and Corrosion10.1.1 Introduction10.2 Diamond-Like Carbon Coatings
10.1.2 Improvements of Wear Resistance
10.1.3 Improvements of Corrosion Resistance
10.1.4 Results of Industrial Field Tests10.2.1 Introduction to Hard Carbon Films10.3 Hydrogen-Free Hard Carbon Films (a-C)
10.2.2 Preparation of DLC by PIIID
10.2.3 Enhancement of Adhesion of DLC Coatings
10.2.4 Microstructure and Characterization of DLC Coatings
10.2.5 Properties of DLC Coatings10.3.1 Synthesis of a-C Films10.4 Deposition of other Protective Coatings
10.3.2 Deposition and Properties of a-C Films synthesized by Cathodic Arc Carbon Plasmas
10.3.3 Amorphous Hard Carbon for Tribological Applications in the Magnetic Storage Industry10.4.1 Plasma Immersion Ion Implantation in Combination with Thin Film Deposition10.5 Modification of Battery Electrodes
10.4.2 Post-Deposition PIII-Treatment of Coatings
10.4.3 Deposition and PIII-Treatment as In-Line Process
10.4.4 Triode Sputter Deposition
10.4.5 Metal Plasma Immersion Ion Implantation and Deposition
10.4.6 Summarizing Remarks10.5.1 Introduction10.6 Modification of Polymer Surfaces
10.5.2 Nickel Alkaline-Electrolyte Cells
10.5.3 Lithium Cells
10.5.4 Lead Acid Cells10.6.1 IntroductionReferences for Chapter 10
10.6.2 Modification of the Wettability of Polystyrene Surfaces
10.6.3 Protection of Polymers from Severe Oxidizing Environments
10.6.4 Improvement of Polymer Wear Resistance by Mesh-Assisted PIII
11.1 Introduction to PIII Semiconductor Applications
11.2 Shallow Junction Formation11.2.1 Shallow Junctions Formed by PIII11.3 Flat-Panel Displays
11.2.2 PIII of BF3 / SiF4
11.2.3 Doping Using Hydrides
11.2.4 Contamination Studies
11.4 Silicon-on-Insulator (SOI) Fabrication11.4.1 Introduction to SOI Fabrication Processes11.5 Microcavity Engineering
11.4.2 SPIMOX (Separation by Plasma Implantation of Oxygen)
11.4.3 SPIMOX Using a Water Plasma
11.4.4 Ion-Cut and Bonded SOI11.5.1 Gettering Effects11.6 Trench Doping
11.5.2 Buried Light Emitting Porous Silicon
11.7 Metallization Technology for Deep Trench Filling
11.8 Conclusions
References for Chapter 11
A.1 Introduction
A.2 Summary
A.3 Detailed Listing of the World-Wide Issued Patents
B1. Physical Constants
B2. Selected Conversion Factors of Units
B3. Lengths
B4. Frequencies
B5. Current Density
B6. Pressure
Plasma Applications Group Home Page
This page was last revised by André Anders on August 12, 2001.
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